型号:

SUD17N25-165-E3

RoHS:无铅 / 符合
制造商:Vishay Siliconix描述:MOSFET N-CH D-S 250V TO252
详细参数
数值
产品分类 分离式半导体产品 >> FET - 单
SUD17N25-165-E3 PDF
标准包装 2,000
系列 TrenchFET®
FET 型 MOSFET N 通道,金属氧化物
FET 特点 标准
漏极至源极电压(Vdss) 250V
电流 - 连续漏极(Id) @ 25° C 17A
开态Rds(最大)@ Id, Vgs @ 25° C 165 毫欧 @ 14A,10V
Id 时的 Vgs(th)(最大) 4V @ 250µA
闸电荷(Qg) @ Vgs 42nC @ 10V
输入电容 (Ciss) @ Vds 1950pF @ 25V
功率 - 最大 3W
安装类型 表面贴装
封装/外壳 TO-252-3,DPak(2 引线+接片),SC-63
供应商设备封装 TO-252,(D-Pak)
包装 带卷 (TR)
其它名称 SUD17N25-165-E3-ND
SUD17N25-165-E3TR
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